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IPI80N06S207AKSA2

MOSFET N-CH 55V 80A TO262-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPI80N06S207AKSA2
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 119
  • Description: MOSFET N-CH 55V 80A TO262-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 250W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.6m Ω @ 68A, 10V
Vgs(th) (Max) @ Id 4V @ 180μA
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 37ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.0066Ohm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet