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  • IPL65R130C7AUMA1

IPL65R130C7AUMA1

Trans MOSFET N-CH 650V 15A 4-Pin VSON EP T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPL65R130C7AUMA1
  • Package: 4-PowerTSFN
  • Datasheet: PDF
  • Stock: 825
  • Description: Trans MOSFET N-CH 650V 15A 4-Pin VSON EP T/R (Kg)

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Details

Tags

Parameters
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 400V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 5.3ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 87 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 75A
Avalanche Energy Rating (Eas) 89 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series CoolMOS™ C7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 102W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 102W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id 4V @ 440μA
See Relate Datesheet