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IPL65R195C7AUMA1

MOSFET N-CH 4VSON


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPL65R195C7AUMA1
  • Package: 4-PowerTSFN
  • Datasheet: PDF
  • Stock: 872
  • Description: MOSFET N-CH 4VSON (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS™ C7
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 75W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 195m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 290μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 400V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 12A
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.195Ohm
Avalanche Energy Rating (Eas) 57 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet