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IPN50R3K0CEATMA1

IPN50R3K0CEATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPN50R3K0CEATMA1
  • Package: SOT-223-3
  • Datasheet: PDF
  • Stock: 953
  • Description: IPN50R3K0CEATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 400mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 84pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Continuous Drain Current (ID) 2.6A
Threshold Voltage 3V
Drain-source On Resistance-Max 3Ohm
DS Breakdown Voltage-Min 500V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case SOT-223-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS™ CE
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
See Relate Datesheet