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  • IPN50R950CEATMA1

IPN50R950CEATMA1

INFINEON IPN50R950CEATMA1 MOSFET Transistor, N Channel, 6.6 A, 500 V, 0.86 ohm, 13 V, 3 VNew


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPN50R950CEATMA1
  • Package: TO-261-3
  • Datasheet: PDF
  • Stock: 850
  • Description: INFINEON IPN50R950CEATMA1 MOSFET Transistor, N Channel, 6.6 A, 500 V, 0.86 ohm, 13 V, 3 VNew (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-261-3
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS™ CE
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Power Dissipation-Max 5W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950m Ω @ 1.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 231pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6.6A Tc
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Continuous Drain Current (ID) 6.6A
Threshold Voltage 3V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet