All Products

IPN80R750P7ATMA1

COOLMOS P7 800V SOT-223


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPN80R750P7ATMA1
  • Package: TO-261-3
  • Datasheet: PDF
  • Stock: 189
  • Description: COOLMOS P7 800V SOT-223 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-261-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series CoolMOS™ P7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 7.2W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 140μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 500V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.75Ohm
DS Breakdown Voltage-Min 800V
RoHS Status ROHS3 Compliant
See Relate Datesheet