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  • IPP034N03LGXKSA1

IPP034N03LGXKSA1

Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP034N03LGXKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 517
  • Description: Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220 (Kg)

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Details

Tags

Parameters
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 94W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 94W
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Rise Time 6.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.4 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0047Ohm
Factory Lead Time 13 Weeks
Pulsed Drain Current-Max (IDM) 400A
Mount Through Hole
Avalanche Energy Rating (Eas) 70 mJ
Mounting Type Through Hole
REACH SVHC No SVHC
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Number of Pins 3
Transistor Element Material SILICON
Lead Free Lead Free
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet