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IPP039N10N5AKSA1

MOSFET N-CH 100V 100A TO220-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP039N10N5AKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 414
  • Description: MOSFET N-CH 100V 100A TO220-3 (Kg)

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Details

Tags

Parameters
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 188W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 125μA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.0039Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 196 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
See Relate Datesheet