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IPP04CN10NGXKSA1
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| Parameters | |
|---|---|
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Turn On Delay Time | 34 ns |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Rise Time | 78ns |
| Drain to Source Voltage (Vdss) | 100V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 76 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 400A |
| Input Capacitance | 13.8nF |
| Avalanche Energy Rating (Eas) | 1000 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 3.9mOhm |
| Rds On Max | 4.2 mΩ |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Package / Case | TO-220 |
| Number of Pins | 3 |
| Published | 2008 |
| JESD-609 Code | e3 |
See Relate Datesheet