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IPP060N06NAKSA1

MOSFET N-CH 60V 17A TO220-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP060N06NAKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 565
  • Description: MOSFET N-CH 60V 17A TO220-3 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 83W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 2.8V @ 36μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 17A Ta 45A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 45A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.006Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet