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IPP072N10N3GXKSA1

Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP072N10N3GXKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 996
  • Description: Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 4910pF @ 50V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0072Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 160 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet