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IPP100N04S2L03AKSA2

MOSFET N-CH 40V 100A TO220-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP100N04S2L03AKSA2
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 602
  • Description: MOSFET N-CH 40V 100A TO220-3 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0033Ohm
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 810 mJ
RoHS Status RoHS Compliant
See Relate Datesheet