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IPP100N04S4H2AKSA1

MOSFET N-CH 40V 100A TO220-3-1


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP100N04S4H2AKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 631
  • Description: MOSFET N-CH 40V 100A TO220-3-1 (Kg)

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Details

Tags

Parameters
Avalanche Energy Rating (Eas) 280 mJ
Packaging Tube
Height 15.65mm
Published 2012
Length 10mm
Width 4.4mm
Series OptiMOS™
RoHS Status RoHS Compliant
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Voltage 40V
Power Dissipation-Max 115W Tc
Element Configuration Single
Current 75A
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 70μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Factory Lead Time 14 Weeks
Vgs (Max) ±20V
Mounting Type Through Hole
Turn-Off Delay Time 19 ns
Package / Case TO-220-3
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Surface Mount NO
Gate to Source Voltage (Vgs) 20V
Number of Pins 3
Max Dual Supply Voltage 40V
Transistor Element Material SILICON
Drain-source On Resistance-Max 0.0027Ohm
Operating Temperature -55°C~175°C TJ
See Relate Datesheet