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IPP100N08N3GXKSA1

Trans MOSFET N-CH 80V 70A 3-Pin(3+Tab) TO-220 Tube


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP100N08N3GXKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 574
  • Description: Trans MOSFET N-CH 80V 70A 3-Pin(3+Tab) TO-220 Tube (Kg)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 10m Ω @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46μA
Halogen Free Halogen Free
Factory Lead Time 13 Weeks
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 40V
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Current - Continuous Drain (Id) @ 25°C 70A Tc
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Published 2006
Series OptiMOS™
Rise Time 46ns
JESD-609 Code e3
Pbfree Code yes
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Vgs (Max) ±20V
Terminal Finish Tin (Sn)
Fall Time (Typ) 5 ns
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Turn-Off Delay Time 22 ns
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Continuous Drain Current (ID) 70A
Pin Count 3
JEDEC-95 Code TO-220AB
Qualification Status Not Qualified
Gate to Source Voltage (Vgs) 20V
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Max Dual Supply Voltage 80V
Operating Mode ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) 280A
Power Dissipation 100W
Turn On Delay Time 14 ns
Avalanche Energy Rating (Eas) 90 mJ
FET Type N-Channel
RoHS Status ROHS3 Compliant
Transistor Application SWITCHING
Lead Free Lead Free
See Relate Datesheet