English

All Products

View All >>
  • IPP100N10S305AKSA1

IPP100N10S305AKSA1

MOSFET N-CH 100V 100A TO220-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP100N10S305AKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 598
  • Description: MOSFET N-CH 100V 100A TO220-3 (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series OptiMOS™
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 34 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 240μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 11570pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 176nC @ 10V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0051Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 1445 mJ
Height 9.25mm
Length 10mm
Width 4.4mm
RoHS Status ROHS3 Compliant
See Relate Datesheet