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IPP111N15N3GXKSA1
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 11.1m Ω @ 83A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 160μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3230pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 83A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| Drain to Source Voltage (Vdss) | 150V |
| Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
| Vgs (Max) | ±20V |
| JEDEC-95 Code | TO-220AB |
| Drain Current-Max (Abs) (ID) | 83A |
| Drain-source On Resistance-Max | 0.0111Ohm |
| Pulsed Drain Current-Max (IDM) | 332A |
| DS Breakdown Voltage-Min | 150V |
| Avalanche Energy Rating (Eas) | 330 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 214W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
See Relate Datesheet