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IPP120N20NFDAKSA1

IPP120N20NFDAKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP120N20NFDAKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 618
  • Description: IPP120N20NFDAKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 84A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6650pF @ 100V
Current - Continuous Drain (Id) @ 25°C 84A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 84A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet