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  • IPP50R500CEXKSA1

IPP50R500CEXKSA1

MOSFET N-CH 500V 7.6A PG-TO220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP50R500CEXKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 241
  • Description: MOSFET N-CH 500V 7.6A PG-TO220 (Kg)

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Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Packaging Tube
Published 2008
Series CoolMOS™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 57W
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 57W
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m Ω @ 2.3A, 13V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 433pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.6A Tc
Gate Charge (Qg) (Max) @ Vgs 18.7nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 7.6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.5Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 129 mJ
FET Feature Super Junction
Height 15.95mm
Length 10.36mm
Width 4.57mm
RoHS Status RoHS Compliant
See Relate Datesheet