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  • IPP60R099C6XKSA1

IPP60R099C6XKSA1

Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP60R099C6XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 789
  • Description: Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220 (Kg)

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Details

Tags

Parameters
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 37.9A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.099Ohm
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 796 mJ
Max Junction Temperature (Tj) 150°C
Height 20.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 40 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 278W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 278W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 18.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.21mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 100V
Current - Continuous Drain (Id) @ 25°C 37.9A Tc
Gate Charge (Qg) (Max) @ Vgs 119nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
See Relate Datesheet