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IPP60R099P6XKSA1

MOSFET N-CH 600V TO220-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP60R099P6XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 892
  • Description: MOSFET N-CH 600V TO220-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ P6
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 278W Tc
Power Dissipation 278W
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 99m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.21mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3330pF @ 100V
Current - Continuous Drain (Id) @ 25°C 37.9A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 37.9A
Threshold Voltage 3.5V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Height 20.7mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet