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  • IPP60R180C7XKSA1

IPP60R180C7XKSA1

MOSFET N-CH 600V 13A TO220-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP60R180C7XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 739
  • Description: MOSFET N-CH 600V 13A TO220-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ C7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 68W Tc
Power Dissipation 68W
Turn On Delay Time 9.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 4V @ 260μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 400V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.08nF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 155mOhm
Rds On Max 180 mΩ
Height 20.7mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet