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IPP60R299CPXKSA1

MOSFET N-CH 650V 11A TO-220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP60R299CPXKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 924
  • Description: MOSFET N-CH 650V 11A TO-220 (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 11A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 96W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 96W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 299m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 11A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.299Ohm
Avalanche Energy Rating (Eas) 290 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet