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  • IPP60R520E6XKSA1

IPP60R520E6XKSA1

MOSFET N-CH 600V 8.1A TO220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP60R520E6XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 811
  • Description: MOSFET N-CH 600V 8.1A TO220 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 66W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 66W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 520m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 230μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 512pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8.1A Tc
Gate Charge (Qg) (Max) @ Vgs 23.4nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 8.1A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.52Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 22A
Height 15.95mm
Length 10.36mm
Width 4.57mm
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet