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  • IPP60R600P6XKSA1

IPP60R600P6XKSA1

MOSFET N-CH 600V 7.3A TO220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP60R600P6XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 828
  • Description: MOSFET N-CH 600V 7.3A TO220 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package PG-TO220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series CoolMOS™ P6
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 63W Tc
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 557pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 7.3A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Input Capacitance 557pF
Drain to Source Resistance 540mOhm
Rds On Max 600 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet