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IPP65R150CFDAAKSA1

MOSFET N-CH 650V TO-220-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP65R150CFDAAKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 540
  • Description: MOSFET N-CH 650V TO-220-3 (Kg)

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 195.3W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 900μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2340pF @ 100V
Current - Continuous Drain (Id) @ 25°C 22.4A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 7.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.6 ns
Turn-Off Delay Time 52.8 ns
Continuous Drain Current (ID) 22.4A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.15Ohm
Pulsed Drain Current-Max (IDM) 72A
Avalanche Energy Rating (Eas) 614 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2008
Series Automotive, AEC-Q101, CoolMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
See Relate Datesheet