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IPP65R380C6XKSA1

MOSFET N-CH 650V 10.6A TO220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP65R380C6XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 314
  • Description: MOSFET N-CH 650V 10.6A TO220 (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320μA
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Halogen Free Halogen Free
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Published 2008
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Series CoolMOS™
JESD-609 Code e3
Rise Time 12ns
Pbfree Code yes
Drain to Source Voltage (Vdss) 650V
Part Status Obsolete
Drive Voltage (Max Rds On,Min Rds On) 10V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Vgs (Max) ±20V
Number of Terminations 3
Fall Time (Typ) 11 ns
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Turn-Off Delay Time 110 ns
Peak Reflow Temperature (Cel) NOT SPECIFIED
Continuous Drain Current (ID) 10.6A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JEDEC-95 Code TO-220AB
Qualification Status Not Qualified
Gate to Source Voltage (Vgs) 20V
Number of Elements 1
Power Dissipation-Max 83W Tc
Drain to Source Breakdown Voltage 700V
Element Configuration Single
Pulsed Drain Current-Max (IDM) 29A
Operating Mode ENHANCEMENT MODE
Avalanche Energy Rating (Eas) 215 mJ
Power Dissipation 83W
RoHS Status RoHS Compliant
Turn On Delay Time 12 ns
See Relate Datesheet