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IPP80N06S2H5AKSA2

MOSFET N-CH 55V 80A TO220-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP80N06S2H5AKSA2
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 786
  • Description: MOSFET N-CH 55V 80A TO220-3 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 23 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 230μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Factory Lead Time 14 Weeks
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Mount Through Hole
Rise Time 23ns
Mounting Type Through Hole
Drive Voltage (Max Rds On,Min Rds On) 10V
Package / Case TO-220-3
Number of Pins 3
Vgs (Max) ±20V
Transistor Element Material SILICON
Fall Time (Typ) 22 ns
Operating Temperature -55°C~175°C TJ
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 80A
Packaging Tube
JEDEC-95 Code TO-220AB
Published 2006
Gate to Source Voltage (Vgs) 20V
Series OptiMOS™
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.0055Ohm
JESD-609 Code e3
Drain to Source Breakdown Voltage 55V
Pbfree Code yes
Avalanche Energy Rating (Eas) 700 mJ
Part Status Obsolete
Height 15.65mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Length 10mm
Number of Terminations 3
Width 4.4mm
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Lead Free Contains Lead
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
See Relate Datesheet