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  • IPP80N06S2L06AKSA1

IPP80N06S2L06AKSA1

MOSFET N-CH 55V 80A TO220-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP80N06S2L06AKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 338
  • Description: MOSFET N-CH 55V 80A TO220-3 (Kg)

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Shipping Method

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.0081Ohm
Drain to Source Breakdown Voltage 55V
Height 15.65mm
Length 10mm
Width 4.4mm
RoHS Status RoHS Compliant
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3m Ω @ 69A, 10V
Vgs(th) (Max) @ Id 2V @ 180μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 21ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 80A
See Relate Datesheet