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IPS060N03LGAKMA1

MOSFET N-CH 30V 50A TO251-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPS060N03LGAKMA1
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet: PDF
  • Stock: 895
  • Description: MOSFET N-CH 30V 50A TO251-3 (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 56W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 56W
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.009Ohm
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status RoHS Compliant
See Relate Datesheet