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  • IPS075N03LGAKMA1

IPS075N03LGAKMA1

INFINEON IPS075N03L G MOSFET Transistor, N Channel, 50 A, 30 V, 6.3 mohm, 10 V, 1 V


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPS075N03LGAKMA1
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet: PDF
  • Stock: 714
  • Description: INFINEON IPS075N03L G MOSFET Transistor, N Channel, 50 A, 30 V, 6.3 mohm, 10 V, 1 V (Kg)

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Details

Tags

Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 47W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 47W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 50 mJ
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
See Relate Datesheet