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IPT020N10N3ATMA1

IPT020N10N3ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPT020N10N3ATMA1
  • Package: 8-PowerSFN
  • Datasheet: PDF
  • Stock: 678
  • Description: IPT020N10N3ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Number of Pins 8
Transistor Element Material SILICON
Manufacturer Package Identifier PG-HSOF-8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 375W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Case Connection DRAIN
Turn On Delay Time 34 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2m Ω @ 150A, 10V
Vgs(th) (Max) @ Id 3.5V @ 272μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 11200pF @ 50V
Current - Continuous Drain (Id) @ 25°C 300A Tc
Gate Charge (Qg) (Max) @ Vgs 156nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 84 ns
Continuous Drain Current (ID) 300A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 175°C
Height 2.4mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet