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IPT60R028G7XTMA1

IPT60R028G7XTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPT60R028G7XTMA1
  • Package: 8-PowerSFN
  • Datasheet: PDF
  • Stock: 797
  • Description: IPT60R028G7XTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Surface Mount YES
Transistor Element Material SILICON
Manufacturer Package Identifier PG-HSOF-8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series CoolMOS™ G7
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 391W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 391W
Case Connection DRAIN
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 28.8A, 10V
Vgs(th) (Max) @ Id 4V @ 1.44mA
Input Capacitance (Ciss) (Max) @ Vds 4820pF @ 400V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.028Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 245A
Avalanche Energy Rating (Eas) 288 mJ
Max Junction Temperature (Tj) 150°C
Height 2.4mm
RoHS Status ROHS3 Compliant
See Relate Datesheet