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  • IPU50R2K0CEBKMA1

IPU50R2K0CEBKMA1

MOSFET N-CH 500V 2.4A TO-251


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPU50R2K0CEBKMA1
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 412
  • Description: MOSFET N-CH 500V 2.4A TO-251 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Turn On Delay Time 6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 600mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 124pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.4A Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 2.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 550V
Height 6.22mm
Length 6.73mm
Width 2.41mm
RoHS Status RoHS Compliant
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series CoolMOS™
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 22W Tc
Element Configuration Single
Power Dissipation 22W
See Relate Datesheet