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IPU50R3K0CEBKMA1

Trans MOSFET N-CH 550V 1.7A 3-Pin TO-251 Tube


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPU50R3K0CEBKMA1
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 505
  • Description: Trans MOSFET N-CH 550V 1.7A 3-Pin TO-251 Tube (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series CoolMOS™ CE
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 18W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 400mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 30μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 84pF @ 100V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 10V
Rise Time 5.8ns
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Fall Time (Typ) 49 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 1.7A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 550V
Pulsed Drain Current-Max (IDM) 4.1A
Avalanche Energy Rating (Eas) 18 mJ
Height 6.22mm
Length 6.73mm
Width 2.41mm
RoHS Status RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet