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  • IPU60R950C6BKMA1

IPU60R950C6BKMA1

Trans MOSFET N-CH 650V 4.4A 3-Pin(3+Tab) TO-251


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPU60R950C6BKMA1
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 113
  • Description: Trans MOSFET N-CH 650V 4.4A 3-Pin(3+Tab) TO-251 (Kg)

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Details

Tags

Parameters
Vgs (Max) ±20V
Mount Through Hole
Mounting Type Through Hole
Fall Time (Typ) 13 ns
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Turn-Off Delay Time 60 ns
Transistor Element Material SILICON
Continuous Drain Current (ID) 4.4A
Operating Temperature -55°C~150°C TJ
Packaging Tube
Gate to Source Voltage (Vgs) 20V
Published 2012
Max Dual Supply Voltage 600V
Series CoolMOS™
Drain-source On Resistance-Max 0.95Ohm
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drain to Source Breakdown Voltage 650V
Number of Terminations 3
Avalanche Energy Rating (Eas) 46 mJ
Height 6.22mm
ECCN Code EAR99
Length 6.73mm
Technology MOSFET (Metal Oxide)
Width 2.41mm
RoHS Status ROHS3 Compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Lead Free Contains Lead
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 37W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 37W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
See Relate Datesheet