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  • IPW50R280CEFKSA1

IPW50R280CEFKSA1

MOSFET N-CH 500V 13A PG-TO247


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPW50R280CEFKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 119
  • Description: MOSFET N-CH 500V 13A PG-TO247 (Kg)

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Details

Tags

Parameters
Transistor Element Material SILICON
Rise Time 6.4ns
Operating Temperature -55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) 13V
Packaging Tube
Published 2008
Vgs (Max) ±20V
Series CoolMOS™
Fall Time (Typ) 7.6 ns
JESD-609 Code e3
Turn-Off Delay Time 40 ns
Pbfree Code yes
Part Status Obsolete
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Dual Supply Voltage 500V
Number of Terminations 3
Terminal Finish Tin (Sn)
Drain-source On Resistance-Max 0.28Ohm
Pulsed Drain Current-Max (IDM) 42.9A
Technology MOSFET (Metal Oxide)
FET Feature Super Junction
RoHS Status RoHS Compliant
Terminal Position SINGLE
Lead Free Lead Free
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 92W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 4.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds 773pF @ 100V
Factory Lead Time 52 Weeks
Mount Through Hole
Current - Continuous Drain (Id) @ 25°C 13A Tc
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Gate Charge (Qg) (Max) @ Vgs 32.6nC @ 10V
See Relate Datesheet