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  • IPW60R075CPFKSA1

IPW60R075CPFKSA1

Trans MOSFET N-CH 600V 39A 3-Pin(3+Tab) TO-247


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPW60R075CPFKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 214
  • Description: Trans MOSFET N-CH 600V 39A 3-Pin(3+Tab) TO-247 (Kg)

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Details

Tags

Parameters
Drain-source On Resistance-Max 0.075Ohm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 52 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 313W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 313W
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.7mA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 100V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
See Relate Datesheet