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IPW60R190E6FKSA1

Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPW60R190E6FKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 498
  • Description: Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Published 2008
Turn-Off Delay Time 90 ns
Series CoolMOS™
Continuous Drain Current (ID) 20.2A
Gate to Source Voltage (Vgs) 20V
JESD-609 Code e3
Max Dual Supply Voltage 600V
Pbfree Code yes
Pulsed Drain Current-Max (IDM) 59A
RoHS Status ROHS3 Compliant
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Lead Free
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 151W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 151W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 630μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 100V
Factory Lead Time 12 Weeks
Current - Continuous Drain (Id) @ 25°C 20.2A Tc
Mount Through Hole
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Mounting Type Through Hole
Package / Case TO-247-3
Rise Time 10ns
Transistor Element Material SILICON
Drive Voltage (Max Rds On,Min Rds On) 10V
Operating Temperature -55°C~150°C TJ
Vgs (Max) ±20V
Packaging Tube
Fall Time (Typ) 8 ns
See Relate Datesheet