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  • IPW60R250CP

IPW60R250CP

MOSFET N-CH 650V 12A TO-247


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPW60R250CP
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 970
  • Description: MOSFET N-CH 650V 12A TO-247 (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 40A
Nominal Vgs 3 V
RoHS Status RoHS Compliant
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 104W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440μA
See Relate Datesheet