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IPW65R045C7FKSA1

IPW65R045C7FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPW65R045C7FKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 255
  • Description: IPW65R045C7FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.25mA
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 82 ns
Factory Lead Time 18 Weeks
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Mount Through Hole
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.045Ohm
Mounting Type Through Hole
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 249 mJ
Package / Case TO-247-3
Max Junction Temperature (Tj) 150°C
Number of Pins 3
Height 25.4mm
RoHS Status ROHS3 Compliant
Transistor Element Material SILICON
Lead Free Lead Free
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ C7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 227W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 227W
Case Connection DRAIN
Turn On Delay Time 20 ns
See Relate Datesheet