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IPW65R048CFDAFKSA1

Trans MOSFET N-CH 650V 63.3A 3-Pin(3+Tab) TO-247


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPW65R048CFDAFKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 405
  • Description: Trans MOSFET N-CH 650V 63.3A 3-Pin(3+Tab) TO-247 (Kg)

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Details

Tags

Parameters
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.048Ohm
Pulsed Drain Current-Max (IDM) 228A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2008
Series Automotive, AEC-Q101, CoolMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 500W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 48m Ω @ 29.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 2.9mA
Input Capacitance (Ciss) (Max) @ Vds 7440pF @ 100V
Current - Continuous Drain (Id) @ 25°C 63.3A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 63.3A
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet