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IPW65R190CFDAFKSA1

MOSFET N-CH 650V 17.5A TO247


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPW65R190CFDAFKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 348
  • Description: MOSFET N-CH 650V 17.5A TO247 (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2012
Series Automotive, AEC-Q101, CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 151W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 700μA
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 100V
Current - Continuous Drain (Id) @ 25°C 17.5A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 53.2 ns
Continuous Drain Current (ID) 17.5A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.19Ohm
Pulsed Drain Current-Max (IDM) 57.2A
Avalanche Energy Rating (Eas) 484 mJ
Height 21.1mm
Length 16.03mm
Width 5.16mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet