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IPZ60R060C7XKSA1

MOSFET N-CH 600V 35A TO247-4


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPZ60R060C7XKSA1
  • Package: TO-247-4
  • Datasheet: PDF
  • Stock: 840
  • Description: MOSFET N-CH 600V 35A TO247-4 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 400V
Mount Through Hole
Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 35A Tc
Package / Case TO-247-4
Transistor Element Material SILICON
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Drive Voltage (Max Rds On,Min Rds On) 10V
Published 2015
Series CoolMOS™ C7
Vgs (Max) ±20V
JESD-609 Code e3
Continuous Drain Current (ID) 35A
Max Dual Supply Voltage 600V
Pbfree Code yes
Drain-source On Resistance-Max 0.06Ohm
Part Status Active
Avalanche Energy Rating (Eas) 159 mJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant
Number of Terminations 4
Lead Free Lead Free
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 162W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800μA
Halogen Free Halogen Free
See Relate Datesheet