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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IPI70N04S406AKSA1 IPI70N04S406AKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Tube 2010 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE 58W Tc 0.0065Ohm 40V SILICON N-Channel 6.5m Ω @ 70A, 10V 4V @ 26μA 2550pF @ 25V 32nC @ 10V 70A 70A Tc 40V 280A 72 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 10mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount 1.946308g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 107W 20 ns 60V 107W Tc 80A 0.0057Ohm 35 ns SILICON N-Channel 5.7m Ω @ 80A, 10V 4V @ 60μA 6500pF @ 25V 81nC @ 10V 5ns 8 ns 20V 60V 80A Tc 10V ±20V
    IRF7204TR IRF7204TR Infineon Technologies $0.00
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    		 download Cut Tape (CT) 1997 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE SWITCHING 0.06Ohm 20V SILICON P-Channel 60m Ω @ 5.3A, 10V 2.5V @ 250μA 860pF @ 10V 25nC @ 10V 5.3A 5.3A Ta 20V
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    		 download Cut Tape (CT) 1999 HEXFET® Obsolete 1 (Unlimited) 4 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G4 Not Qualified 1 SINGLE DRAIN 0.051Ohm 55V SILICON N-Channel 40m Ω @ 3.8A, 10V 2V @ 250μA 870pF @ 25V 48nC @ 10V 5.2A 3.8A Ta 55V 30A 110 mJ
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    		 Tape & Reel (TR) 1999 HEXFET® Obsolete 1 (Unlimited) 4 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY TO-261-4, TO-261AA not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier DUAL GULL WING 260 30 YES R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1W Ta SWITCHING 0.031Ohm 30V SILICON N-Channel 31m Ω @ 4.6A, 10V 1V @ 250μA 840pF @ 25V 50nC @ 10V 4.6A 4.6A Ta 30V 37A 140 mJ 4.5V 10V ±16V
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    		 Tube 2002 HEXFET® Obsolete 1 (Unlimited) 2 Non-RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.006Ohm 30V SILICON N-Channel 6m Ω @ 71A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 140A 140A Tc 30V 470A 610 mJ 4.5V 10V ±16V
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    		 download Tube 2004 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant AVALANCHE RATED 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 NOT SPECIFIED YES R-PDSO-G8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.0075Ohm 30V SILICON N-Channel 7.5m Ω @ 15A, 10V 2V @ 250μA 3480pF @ 25V 56nC @ 5V 15A 15A Ta 30V 120A 200 mJ 2.8V 10V ±12V
    AUIRF1324STRL7P AUIRF1324STRL7P Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 Automotive, AEC-Q101, HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 300W Tc 340A N-Channel 1.65m Ω @ 195A, 10V 4V @ 250μA 7590pF @ 24V 240nC @ 10V 340A Tc 24V 10V ±20V
    IPL60R104C7AUMA1 IPL60R104C7AUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ C7 yes Active 2A (4 Weeks) 4 ROHS3 Compliant Contains Lead 4 4-PowerTSFN not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NO LEAD NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 600V 122W Tc 20A SWITCHING SILICON N-Channel 104m Ω @ 9.7A, 10V 4V @ 490μA 1819pF @ 400V 42nC @ 10V 20A Tc 83A 97 mJ 10V ±20V
    IPW60R199CPFKSA1 IPW60R199CPFKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 16A 3 TO-247-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 139W 10 ns 600V 139W Tc 16A SWITCHING 50 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 660μA 1520pF @ 100V 43nC @ 10V 5ns 20V 16A Tc 10V ±20V
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    		 download Through Hole Tube 2010 HEXFET® Not For New Designs 1 (Unlimited) 7 EAR99 10.67mm ROHS3 Compliant No 7 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-262-7 No SVHC 11.3mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W 23 ns 2V 300W Tc 240A SWITCHING 80 ns SILICON N-Channel 2.6m Ω @ 140A, 10V 4V @ 250μA 7820pF @ 25V 200nC @ 10V 130ns 52 ns 20V 55V 160A Tc 680 mJ 10V ±20V
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    		 download 16 Weeks Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFS8409 YES FET General Purpose Power Single 375W Tc N-Channel 1.2m Ω @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 450nC @ 10V 195A 195A Tc 40V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2011 OptiMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 Halogen Free Single 300W 34 ns 100V 300W Tc 100A SWITCHING 84 ns SILICON N-Channel 3m Ω @ 100A, 10V 3.5V @ 275μA 14800pF @ 50V 206nC @ 10V 58ns 28 ns 20V 100V 100A Tc 400A 6V 10V ±20V
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    		 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFS8409 YES FET General Purpose Power Single 375W Tc N-Channel 0.75m Ω @ 100A, 10V 3.9V @ 250μA 13975pF @ 25V 460nC @ 10V 240A 240A Tc 40V 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 380W 66 ns 1V 380W Tc 195A SWITCHING 0.0024Ohm 110 ns SILICON N-Channel 2.4m Ω @ 165A, 10V 2.5V @ 250μA 11210pF @ 50V 140nC @ 4.5V 220ns 110 ns 16V 60V 195A Tc 290 mJ 4.5V 10V ±16V
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    		 download 16 Weeks Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant No 3 TO-262-3 Wide Leads 9.65mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 300W 19 ns 300W Tc 295A 71 ns N-Channel 1.8m Ω @ 187A, 10V 4V @ 250μA 7978pF @ 25V 225nC @ 10V 241ns 100 ns 20V 40V 240A 240A Tc 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 41W 42 ns 100V 41W Tc 79A SWITCHING 112 ns SILICON N-Channel 3m Ω @ 79A, 10V 3.5V @ 270μA 14800pF @ 50V 206nC @ 10V 38ns 37 ns 20V 79A Tc 6V 10V ±20V
    AUIRLS4030-7TRL AUIRLS4030-7TRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2015 Automotive, AEC-Q101, HEXFET® Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G6 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 370W Tc SWITCHING 0.0039Ohm 100V SILICON N-Channel 3.9m Ω @ 110A, 10V 2.5V @ 250μA 11490pF @ 50V 140nC @ 4.5V 190A 190A Tc 100V 750A 320 mJ 4.5V 10V ±16V
    IPZ60R060C7XKSA1 IPZ60R060C7XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2015 CoolMOS™ C7 yes Active 1 (Unlimited) 4 ROHS3 Compliant Lead Free TO-247-4 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T4 1 SINGLE WITH BUILT-IN DIODE Halogen Free 600V 162W Tc 35A SWITCHING 0.06Ohm SILICON N-Channel 60m Ω @ 15.9A, 10V 4V @ 800μA 2850pF @ 400V 68nC @ 10V 35A Tc 159 mJ 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2015 HEXFET® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant ULTRA LOW RESISTANCE TO-247-3 4.8mOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-247AC 517W Tc 171A SWITCHING 150V SILICON N-Channel 5.9m Ω @ 103A, 10V 5V @ 250μA 10470pF @ 50V 227nC @ 10V 171A Tc 150V 684A 763 mJ 10V ±30V
    IPI50R399CPXKSA2 IPI50R399CPXKSA2 Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 10.2mm ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.45mm 4.5mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 DRAIN Single 83W 35 ns 500V 83W Tc 9A SWITCHING 80 ns SILICON N-Channel 399m Ω @ 4.9A, 10V 3.5V @ 330μA 890pF @ 100V 23nC @ 10V 14ns 20V 560V 9A 9A Tc 20A 215 mJ 10V ±20V
    IPP50N12S3L15AKSA1 IPP50N12S3L15AKSA1 Infineon Technologies $0.00
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    		 download 2016 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-220AB N-CHANNEL 0.0209Ohm 120V METAL-OXIDE SEMICONDUCTOR SILICON 50A 200A 330 mJ
    IPB80P03P405ATMA1 IPB80P03P405ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 35 ns -30V 137W Tc 80A 0.0047Ohm 70 ns SILICON P-Channel 4.7m Ω @ 80A, 10V 4V @ 253μA 10300pF @ 25V 130nC @ 10V 10ns 20 ns 20V 80A Tc 30V 410 mJ 10V ±20V
    IRFSL5615PBF IRFSL5615PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.652mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 40 1 SINGLE WITH BUILT-IN DIODE DRAIN 144W 8.9 ns 144W Tc 33A AMPLIFIER 0.042Ohm 17.2 ns SILICON N-Channel 42m Ω @ 21A, 10V 5V @ 100μA 1750pF @ 50V 40nC @ 10V 23.1ns 13.1 ns 20V 150V 33A Tc 140A 109 mJ 10V ±20V
    IPP50R399CPXKSA1 IPP50R399CPXKSA1 Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 10.36mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 15.95mm 4.57mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Powers Not Qualified 1 TO-220AB ISOLATED Halogen Free Single 83W 35 ns 3V 500V 83W Tc 9A SWITCHING 80 ns SILICON N-Channel 399m Ω @ 4.9A, 10V 3.5V @ 330μA 890pF @ 100V 4nC @ 10V 14ns 14 ns 20V 500V 9A 9A Ta 20A 215 mJ 10V ±20V
    AUIRFR5305TR AUIRFR5305TR Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 175°C -55°C ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 Other Transistors 110W 1 TO-252AA DRAIN Single 110W 14 ns 31A SWITCHING 0.065Ohm 39 ns P-Channel 65m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 66ns 63 ns 20V 55V 31A Tc 280 mJ
    IPB80N06S2L09ATMA2 IPB80N06S2L09ATMA2 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant No 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 10 ns 55V 190W Tc 80A 0.011Ohm 53 ns SILICON N-Channel 8.2m Ω @ 52A, 10V 2V @ 125μA 2620pF @ 25V 105nC @ 10V 19ns 18 ns 20V 80A Tc 4.5V 10V ±20V
    IRL3803STRRPBF IRL3803STRRPBF Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2002 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.006Ohm 30V SILICON N-Channel 6m Ω @ 71A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 140A 140A Tc 30V 470A 610 mJ 4.5V 10V ±16V
    IRFS52N15DTRRP IRFS52N15DTRRP Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Not For New Designs 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 3.8W 16 ns 3.8W Ta 230W Tc 51A 28 ns N-Channel 32m Ω @ 36A, 10V 5V @ 250μA 2770pF @ 25V 89nC @ 10V 47ns 25 ns 30V 150V 51A Tc 10V ±30V