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IPZ65R045C7XKSA1

MOSFET N-CH 650V 46A TO247-4


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPZ65R045C7XKSA1
  • Package: TO-247-4
  • Datasheet: PDF
  • Stock: 653
  • Description: MOSFET N-CH 650V 46A TO247-4 (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-4
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ C7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 227W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 227W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.25mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 82 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain to Source Breakdown Voltage 650V
Height 21.1mm
Length 16.13mm
Width 5.21mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet