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  • IR2011

IR2011

Through Hole Tube Obsolete EAR99 Gate Drivers ICs Inverting 2 200V V 8-DIP (0.300, 7.62mm) IR2011 High-Side or Low-Side


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IR2011
  • Package: 8-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 356
  • Description: Through Hole Tube Obsolete EAR99 Gate Drivers ICs Inverting 2 200V V 8-DIP (0.300, 7.62mm) IR2011 High-Side or Low-Side (Kg)

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Details

Tags

Parameters
Published 1996
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology CMOS
Voltage - Supply 10V~20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 15V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IR2011
JESD-30 Code R-PDIP-T8
Qualification Status Not Qualified
Input Type Inverting
Rise / Fall Time (Typ) 35ns 20ns
Interface IC Type HALF BRIDGE BASED MOSFET DRIVER
Channel Type Independent
Number of Drivers 2
Output Peak Current Limit-Nom 1A
Driven Configuration High-Side or Low-Side
Gate Type N-Channel MOSFET
Current - Peak Output (Source, Sink) 1A 1A
High Side Driver YES
Logic Voltage - VIL, VIH 0.7V 2.2V
High Side Voltage - Max (Bootstrap) 200V
Height Seated (Max) 5.33mm
Length 9.88mm
RoHS Status Non-RoHS Compliant
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Surface Mount NO
Operating Temperature -40°C~150°C TJ
Packaging Tube

IR2011 Description


The IR2011 is a high-speed, high-power MOSFET driver with separate high and low side referenced output channels. Down to 3.0V logic, logic inputs are compatible with normal CMOS or LSTTL output. A high pulse current buffer stage is used in the output drivers to reduce driver cross-conduction. The propagation delays are matched to make high-frequency applications easier to employ. The floating channel can be utilized to drive a high-side N-channel power MOSFET that operates at 200 volts. Ruggedized monolithic architecture is possible because to proprietary HVIC and latch immune CMOS technology.



IR2011 Features


  • Negative transient voltage tolerant, dV/dt immune

  • The supply voltage for gate drives ranges from 10 to 20 volts.

  • Low and high side channels that are independent

  • HIN/LIN active high input logic

  • Both channels are undervoltage locked.



IR2011 Applications


  • Converters 

  • DC motor control