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  • IR2011PBF

IR2011PBF

Through Hole Tube Active EAR99 Gate Drivers ICs Inverting 200V V 8-DIP (0.300, 7.62mm) IR2011PBF High-Side or Low-Side


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IR2011PBF
  • Package: 8-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 425
  • Description: Through Hole Tube Active EAR99 Gate Drivers ICs Inverting 200V V 8-DIP (0.300, 7.62mm) IR2011PBF High-Side or Low-Side (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Number of Pins 8
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 1996
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination Through Hole
ECCN Code EAR99
Subcategory MOSFET Drivers
Max Power Dissipation 1W
Technology CMOS
Voltage - Supply 10V~20V
Terminal Position DUAL
Number of Functions 1
Supply Voltage 15V
Base Part Number IR2011PBF
Number of Outputs 2
Output Voltage 220V
Max Output Current 1A
Power Supplies 15V
Nominal Supply Current 230μA
Power Dissipation 1W
Output Current 1A
Max Supply Current 230μA
Propagation Delay 80 ns
Input Type Inverting
Turn On Delay Time 20 ns
Max Output Voltage 20V
Rise Time 50ns
Fall Time (Typ) 35 ns
Turn-Off Delay Time 75 ns
Min Output Voltage 10V
Rise / Fall Time (Typ) 35ns 20ns
Interface IC Type HALF BRIDGE BASED MOSFET DRIVER
Channel Type Independent
Output Peak Current Limit-Nom 1A
Driven Configuration High-Side or Low-Side
Gate Type N-Channel MOSFET
Current - Peak Output (Source, Sink) 1A 1A
High Side Driver YES
Logic Voltage - VIL, VIH 0.7V 2.2V
High Side Voltage - Max (Bootstrap) 200V
Height 4.9276mm
Length 10.8966mm
Width 7.11mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IR2011PBF Overview


For greater flexibility, the 8-DIP (0.300, 7.62mm) package is adopted.Tube is the packaging method.Ideally, it should be mounted in the direction of Through Hole.When the supply voltage is 10V~20V it is able to demonstrate its superiority.This device is designed with a N-Channel MOSFET gate type.This device is allowed to operate in a temperature range of -40°C~150°C TJ.The input type for this program is Inverting.There are 8 terminations to form the base of its configuration.Under its base part number IR2011PBF, various related parts can be found.Mosfet driver is mounted using the Through Hole method.A total of 8 pins are available on the device.Specification is for 15V supply voltage operation.As its interface IC, HALF BRIDGE BASED MOSFET DRIVER is being employed.There is a maximum output current of 1A that can be achieved.There are several useful electronic components in this subcategory of MOSFET Drivers.Maximum (Bootstrap) voltage is 200V.There are 2 outputs integrated for its basis.The device is capable of delivering a current of 1A.1W dissipates maximum power without overheating, showing its maximum capability to transfer and conduct power loss.To ensure high stability, the supply current should be kept at 230μA.With its power supplies of 15V, it solves the power supply problems for diverse applications.The voltage it outputs is 220V.Mosfet driver ic is recommended to keep the maximum output voltage at 20V.

IR2011PBF Features


Embedded in the Tube package
Employing a gate type of N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 200V
Maximum power dissipation of 1W

IR2011PBF Applications


There are a lot of Infineon Technologies IR2011PBF gate drivers applications.

  • Head-up and Head mounted displays
  • General Purpose 3-Phase Inverter
  • Isolated Supplies for Motor Control
  • Line drivers
  • UPS systems
  • Commercial and agricultural vehicles (CAV)
  • Industrial Power Supplies
  • High-speed communications
  • serial peripheral interface (SPI), I2C
  • Solar power supplies