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IR2111S

Surface Mount Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 2 600V V 8-SOIC (0.154, 3.90mm Width) IR2111S Half-Bridge


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IR2111S
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 857
  • Description: Surface Mount Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 2 600V V 8-SOIC (0.154, 3.90mm Width) IR2111S Half-Bridge (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 1996
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology CMOS
Voltage - Supply 10V~20V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 15V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IR2111S
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Input Type Non-Inverting
Rise / Fall Time (Typ) 80ns 40ns
Channel Type Synchronous
Number of Drivers 2
Turn On Time 0.95 μs
Output Peak Current Limit-Nom 0.5A
Driven Configuration Half-Bridge
Gate Type IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink) 250mA 500mA
High Side Driver YES
Logic Voltage - VIL, VIH 8.3V 12.6V
Turn Off Time 0.18 μs
High Side Voltage - Max (Bootstrap) 600V
Height Seated (Max) 1.75mm
Length 4.9mm
Width 3.9mm
RoHS Status Non-RoHS Compliant
IR2111S Description

The IR2111(S) is a high-voltage, high-speed power MOSFET and IGBT driver for halfbridge applications with dependent high and low side referenced output channels. Ruggedized monolithic architecture is possible because to proprietary HVIC and latch immune CMOS technology. Standard CMOS outputs are compatible with logic input. A high pulse current buffer stage is used in the output drivers to reduce driver cross-conduction. To prevent shoot-through in the output half-bridge, internal deadtime is given. The floating channel can be utilized to drive a 600-volt N-channel power MOSFET or IGBT in a high-side setup.

IR2111S Features


? Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
? Gate drive supply range from 10 to 20V
? Undervoltage lockout for both channels
? CMOS Schmitt-triggered inputs with pull-down
? Matched propagation delay for both channels
? Internally set deadtime
? High side output in phase with input
? Also available LEAD-FREE


IR2111S Applications


? Consumer
? Industrial heating and welding
? Motor control and drives
? Power Management (SMPS) - Reference Design
? Robotics