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IR2112

Through Hole Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 2 600V V 14-DIP (0.300, 7.62mm) IR2112 High-Side or Low-Side


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IR2112
  • Package: 14-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 959
  • Description: Through Hole Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 2 600V V 14-DIP (0.300, 7.62mm) IR2112 High-Side or Low-Side (Kg)

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Details

Tags

Parameters
Mounting Type Through Hole
Package / Case 14-DIP (0.300, 7.62mm)
Surface Mount NO
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 1996
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14
ECCN Code EAR99
Technology CMOS
Voltage - Supply 10V~20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 15V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IR2112
JESD-30 Code R-PDIP-T14
Qualification Status Not Qualified
Input Type Non-Inverting
Rise / Fall Time (Typ) 80ns 40ns
Interface IC Type HALF BRIDGE BASED MOSFET DRIVER
Channel Type Independent
Number of Drivers 2
Turn On Time 0.18 μs
Output Peak Current Limit-Nom 0.5A
Driven Configuration High-Side or Low-Side
Gate Type IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink) 250mA 500mA
High Side Driver YES
Logic Voltage - VIL, VIH 6V 9.5V
Turn Off Time 0.16 μs
High Side Voltage - Max (Bootstrap) 600V
Height Seated (Max) 5.33mm
Length 19.305mm
RoHS Status Non-RoHS Compliant

Description


The IR2112 is an independent high and low-side referenced output channel high voltage, high-speed power MOSFET and IGBT driver. Ruggedized monolithic construction is made possible by proprietary HVIC and latches immune CMOS technology. Down to 3.3V logic, logic inputs are compatible with typical CMOS or LSTTL outputs.

A high pulse current buffer stage with minimal driver cross-conduction is a feature of the output drivers. To make use in high-frequency applications simpler, propagation delays are matched. An N-channel power MOSFET or IGBT that operates up to 600 volts can be driven via the floating channel in a high-side configuration.



Features


  • CMOS Schmitt-triggered inputs with pull-down

  • Cycle by cycle edge-triggered shutdown logic

  • Matched propagation delay for both channels

  • Outputs in phase with inputs

  • Gate drive supply range from 10 to 20V

  • Undervoltage lockout for both channels

  • 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset

  • Floating channel designed for bootstrap operation

  • Fully operational to +600V

  • Tolerant to negative transient voltage dV/dt immune



Applications


  • SMPS (Switched Mode Power Supply) to supply power to Sensitive medical equipment and computers

  • UPS (Uninterruptible Power Supply) system

  • AC and DC motor drives offering speed control

  • Chopper and inverters

  • Solar inverters