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  • IRF1104PBF

IRF1104PBF

MOSFET N-CH 40V 100A TO-220AB


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF1104PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 324
  • Description: MOSFET N-CH 40V 100A TO-220AB (Kg)

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Details

Tags

Parameters
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Threshold Voltage 4V
Subcategory FET General Purpose Power
JEDEC-95 Code TO-220AB
Voltage - Rated DC 40V
Gate to Source Voltage (Vgs) 20V
Technology MOSFET (Metal Oxide)
Drain to Source Breakdown Voltage 40V
Current Rating 100A
Pulsed Drain Current-Max (IDM) 400A
Dual Supply Voltage 40V
Number of Elements 1
Recovery Time 110 ns
Power Dissipation-Max 170W Tc
Nominal Vgs 4 V
Element Configuration Single
Height 8.77mm
Length 10.5156mm
Operating Mode ENHANCEMENT MODE
Width 4.69mm
Power Dissipation 170W
Radiation Hardening No
REACH SVHC No SVHC
Case Connection DRAIN
Turn On Delay Time 15 ns
RoHS Status ROHS3 Compliant
FET Type N-Channel
Lead Free Lead Free
Factory Lead Time 12 Weeks
Transistor Application SWITCHING
Mount Through Hole
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 9m Ω @ 60A, 10V
Package / Case TO-220-3
Vgs(th) (Max) @ Id 4V @ 250μA
Number of Pins 3
Transistor Element Material SILICON
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Published 1998
Series HEXFET®
Rise Time 114ns
Part Status Active
Drive Voltage (Max Rds On,Min Rds On) 10V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Vgs (Max) ±20V
Number of Terminations 3
Fall Time (Typ) 19 ns
Termination Through Hole
Turn-Off Delay Time 28 ns
ECCN Code EAR99
Continuous Drain Current (ID) 100A
Resistance 9mOhm
See Relate Datesheet